IRLR3636TRPBF 60V 50A 6.8mΩ@10V,50A 143W 2.5V 1 N-Channel TO-252-2(DPAK) MOSFETs

Description

The IRLR3636TRPBF MOSFET from Infineon Technologies is a high-performance N-channel power MOSFET designed for efficient switching and power control in DC motor drives, power supplies, and other high-current electronic circuits. It features a low on-resistance and high current capability, enabling reduced conduction losses and improved thermal performance in compact surface-mount designs. Packaged in a TO-252-2 (DPAK) form factor, this MOSFET supports a drain-source voltage of 60 V and can handle continuous currents up to 50 A, making it suitable for demanding power applications such as battery management systems, UPS, DC-DC converters, and motor control circuits. With a typical RDS(on) of 6.8 mΩ at a 10 V gate drive, a power dissipation rating of up to 143 W, and a gate threshold voltage around 2.5 V, the device offers efficient switching performance while maintaining reliable operation over a wide temperature range from −55 °C to +175 °C. The component is RoHS compliant and optimized for low-frequency switching applications requiring robustness and high efficiency.

Package includes:

1 x IRLR3636TRPBF-INFINEON TECHNOLOGIES-60V 50A 6.8mΩ@10V,50A 143W 2.5V 1 N-Channel TO-252-2(DPAK) MOSFETs ROHS